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| Paper IPM / P / 12792 |
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| Abstract: | |||||
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The electronic properties of bilayer graphene are distinct from both the conventional two dimensional
electron gas and monolayer graphene due to the special chiral properties and excitation
charge carrier dispersions. We demonstrate a valley polarized quantum Hall effect in biased bilayer
graphene when the system is subjected to a perpendicular magnetic field. In the system a
topological phase transition from quantum valley Hall to valley polarization quantum Hall phase
and that to a trivial insulator phase can be occurred by tuning vertical stain. Besides, we study
the layer-resolved transport properties by calculating layer polarization quantity within recursive
Green's function technique. These predictions can be verified by experiments and our results show
possible exploiting strained bilayer graphene in the presence of external fields for electronics and
valleytronics devices.
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