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| Paper IPM / P / 16182 |
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| Abstract: | |||||||
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In this paper, the investigation of possible superconducting
phase in monolayer indium selenide is determined using first-principle calculations for both the hole and electron doping systems. The hole-doped dependence of the Fermi surface is exclusively important for the monolayer InSe and it leads to the modification of the Fermi surface from six separated pockets to two pockets by increasing the hole densities. For quite low hole-doped of the system, below the Lifshitz transition point, a strong electron-phonon coupling λ ∼ 7.6 is obtained; providing a superconductive critical temperature of Tc=65 K. However, for some hole doping above the Lifshitz transition point, the combination of the temperature dependence of the bare susceptibility and the strong electron-phonon interaction gives rise to a phonon softening at specific momentum and therefore charge density wave emerges at a temperature much greater than Tc. Having included non-adiabatic effects, we could carefully analyze conditions for which either a superconductive or charge density wave phase occurs in the system. In addition, monolayer InSe is become dynamically stable by including non-adiabatic effects for different carrier concentrations at room temperature.
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