Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In₂SeTe and In₂SSe, pristine InSe, and InSe under 4% and 6% tensile strain. In this work, the potential of these materials for energy conversion in thermoelectric generators and thermal control in metal-oxide-semiconductor field-effect transistors is investigated.

A promising option for effective heat dissipation and enhanced transistor reliability, strained InSe shows the lowest peak temperature during heating among the materials studied. With a high Seebeck coefficient, low thermal conductivity, and an improved figure of merit, the Janus In₂SeTe monolayer, on the other hand, compensates for its increased phonon scattering to reach the maximum temperatures, making it a potent thermoelectric material.

Our findings emphasize the importance of strain engineering and structural asymmetry in tuning phonon transport, enabling material optimization for next-generation nanoelectronic and energy-harvesting devices.