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| Paper IPM / P / 6918 |
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| Abstract: | |||||||||||||||
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This paper describes the modeling of a standard 0.25 μm CMOS
technology at cryogenic temperatures. In the first step of teh
work, the parameters of the EKV v2.6 model were extracted at
different temperatures(300, 150 and 70 K). The extracted
parameters were then used to optimize the performance of a room
temperature designed active feedback front-end preamplifier (AFP)
at 130 K. The results show that with a small adjustment of the
extracted parameters it is possible to have a reasonable model at
low temperatures. By optimizing the bias conditions at 130 K, a
fall time down to 1.5 ns and a double plus resolution of 6.5 ns
were measured for NA 60 proton beamscope. The proposed approach
will also allow a low temperature design optimiztion for future
projects, which will not be possible using only standard models
provided by the foundry.
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