“School of Physics”
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| Paper IPM / P / 8686 |
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| Abstract: | |||||||||||||
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Nanoparticle copper/carbon composite films were prepared by Co-deposition of RFSputtering
and RF-PECVD method from acetylene gas and copper target. We investigate
deposition process in the region where by changing pressure, the process converts to
physical sputtering mode in constant power regime and at a critical pressure between 1.5 to
3 Pa. The estimated value of mean ion energy at this critical point of pressure is close to
threshold energy of physical sputtering of copper atoms by acetylene ions. By utilizing this
property and by setting initial pressure from 1.3 to 6.6 Pa, nanoparticles copper/carbon
composite films were grown with different copper content. The Copper content of our films
was obtained by Rutherford Back Scattering (RBS) and it varied from
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